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STD19N3LLH6AG - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS STD19N3LLH6AG 30 V RDS(on) max. 33 mΩ ID PTOT 10 A 30 W.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD19N3LLH6AG Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STD19N3LLH6AG 30 V RDS(on) max. 33 mΩ ID PTOT 10 A 30 W  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Logic level Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.