Datasheet Summary
Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A STripFET™ H6 Power MOSFET in a DPAK package
- production data
Figure 1: Internal schematic diagram
Features
Order code
STD19N3LLH6AG 30 V
RDS(on) max.
33 mΩ
ID PTOT 10 A 30 W
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Logic level
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code...