STD37P3H6AG mosfet equivalent, p-channel power mosfet.
Order code
VDS RDS(on) max.
ID
PTOT
STD37P3H6AG -30 V 15 mΩ -49 A 60 W
* Designed for automotive applications and AEC-Q101 qualified
* Very low on-resistanc.
and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(3)
Order code STD37P3H6AG
AM11258v1
Table 1: Device summa.
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