STD3N95K5AG Datasheet, STMicroelectronics

Order code VDS RDS(on)max. ID STD3N95K5AG 950 V 5.0 Ω 2A PTOT 45 W
* AEC-Q101 qualified
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (fi.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 techn.

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.