Datasheet Details
| Part number | STD3NC30 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 86.88 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD3NC30 Download (PDF) |
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| Part number | STD3NC30 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 86.88 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD3NC30 Download (PDF) |
|
|
|
The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™ .
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
® STD3NC50 N - CHANNEL 500V - 2.4Ω - 3A TO-251/TO-252 PowerMESH™ ΙΙ MOSFET PRELIMINARY DATA TYPE ST D3NC50 s s s s s V DSS 500 V R DS(on) < 2.7 Ω ID 3 A www.DataSheet4U.com s TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL.
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