STD3NC60-1 Datasheet | STMicroelectronics

STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK Power Mesh™II MOSFET TYPE STD3NC60 STD3NC60-1 .. s s s s s s VDSS 600V 600V RDS(on) < 2.2Ω < 2.2Ω ID 3.2A 3.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD PACKAGE) 3 1 DPAK No Suffix 3 2 IPAK (Suffix”-1”) DESCRIPTION The Power MESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 3.2 2 12.8 50 0.4 3.5 - 65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C (- )Pulse width limited by safe operating area (1)ISD ≤3.2A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. August 2002 1/10 STD3NC60 - STD3NC60-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.5 100 275 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS .. Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 3.2...