STD3NC30 Datasheet | STMicroelectronics

® STD3NC50 - CHANNEL 500V - 2.4Ω - 3A TO-251/TO-252 Power MESH™ ΙΙ MOSFET PRELIMINARY DATA TYPE ST D3NC50 s s s s s V DSS 500 V R DS(on) < 2.7 Ω ID 3 A .. s TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL. 3 1 DPAK TO-252 (Suffix ”T4”) IPAK TO-251 (Suffix ”-1”) 3 2 1 DESCRIPTION The Power MESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( - ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 500 500 ± 30 3.2 2 12.8 60 0.48 4 -65 to 150 150 ( 1) ISD ≤ 3 A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o (- ) Pulse width limited by safe operating area January 2000 1/7 STD3NC50 THERMAL DATA R thj -case Rthj...