STD3NK80Z-1 Datasheet | STMicroelectronics

Features TAB 3 2 1 IPAK D(2, TAB) Order code 800 V - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitance - Zener-protected Applications RDS(on) max. 4.5 Ω ID 2.5 A - Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the Super MESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established Power MESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK80Z-1 Product summary Order code Marking D3NK80Z Package IPAK Packing Tube DS14364 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter...