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STD3NK80ZT4 - N-Channel Power MOSFET

Download the STD3NK80ZT4 datasheet PDF. This datasheet also covers the STD3NK80Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.

Key Features

  • Order code VDS STD3NK80ZT4 800 V.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected RDS(on) max. 4.5 Ω ID 2.5 A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD3NK80Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STD3NK100Z N-Channel MOSFET Transistor Inchange Semiconductor
STD3NK50Z N-CHANNEL SuperMESH MOSFET ST Microelectronics
STD3NK50Z-1 N-Channel MOSFET ST Microelectronics
STD3NK50ZT4 N-Channel MOSFET ST Microelectronics
STD3NK60Z N-CHANNEL Power MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD3NK80Z-1 N-channel Power MOSFET
STD3NK100Z N-channel 1000V 2.5A Power MOSFET
STD3NK60ZT4 N-CHANNEL Power MOSFET
STD3NK90Z N-CHANNEL Power MOSFET
STD3NK90Z-1 N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD3NK80ZT4 Datasheet N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS STD3NK80ZT4 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 4.5 Ω ID 2.5 A Applications • Switching applications Description AM01476v1_tab This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.