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STD3NK80Z-1
Datasheet
N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in an IPAK package
Features
TAB 3
2 1
IPAK
D(2, TAB)
Order code
VDS
STD3NK80Z-1
800 V
• 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected
Applications
RDS(on) max. 4.5 Ω
ID 2.5 A
• Switching applications
G(1)
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed
S(3)
using the SuperMESH technology by STMicroelectronics, an optimization of the well-
AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this
device is designed to ensure a high level of dv/dt capability for the most demanding
applications.
STD3NK80Z-1 Datasheet
