STD3NK90Z-1, STD3NK90Z Datasheet - STMicroelectronics

STD3NK90Z-1 N-CHANNEL Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

www.DataSheet4U.com STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z-1 VDSS 900 900 900 900 V V V V RDS(on) < 4.8 < 4.8 < 4.8 < 4.8 Ω Ω Ω Ω ID 3 3 3 3 A A A A Pw 90 W 25 W 90 W 90 W 3 1 2 TYPICAL RDS(on) = 4.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY T.

STD3NK90Z-1 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STD3NK90Z_STMicroelectronics.pdf