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STD4NK50ZT4 - N-CHANNEL Power MOSFET

Download the STD4NK50ZT4 datasheet PDF. This datasheet also covers the STD4NK50Z-1 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected PTOT 45 W Package IPAK DPAK G(1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD4NK50Z-1-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STD4NK50ZT4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STD4NK50ZT4. For precise diagrams, and layout, please refer to the original PDF.

STD4NK50Z-1, STD4NK50ZT4 Datasheet N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages TAB IPAK 3 12 D(2, TAB) TAB 23 1 DPAK Features Orde...

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and DPAK packages TAB IPAK 3 12 D(2, TAB) TAB 23 1 DPAK Features Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK G(1) Applications • Switching applications S(3) AM01475V1 Product status link STD4NK50Z-1 STD4NK50ZT4 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.