Datasheet4U Logo Datasheet4U.com

STD5NE10L - N - CHANNEL STripFET POWER MOSFET

Description

This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD5N20L N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET STMicroelectronics
STD5N52K3 N-CHANNEL POWER MOSFET STMicroelectronics
STD5N60DM2 N-CHANNEL POWER MOSFET STMicroelectronics
STD5N60M2 N-channel Power MOSFET STMicroelectronics
STD5N62K3 N-channel MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD5NE10 N - CHANNEL POWER MOSFET
STD5N20 N - CHANNEL POWER MOS TRANSISTOR
STD5N52U N-Channel Power MOSFET
STD5NB20 N - CHANNEL PowerMESHO MOSFET
STD5NB30 N - CHANNEL PowerMESHO MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com ® STD5NE10L N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD5NE10L s s s s s V DSS 100 V R DS(on) < 0.4 Ω ID 5 A s TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES 3 2 1 IPAK TO-251 (Suffix ”-1”) 1 3 DPAK TO-252 (Suffix ”T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Published: |