STD80N240K6 - N-channel Power MOSFET

STMicroelectronics

General Description

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology.

Key Features

Order code VDS RDS(on) max. ID STD80N240K6 800 V 220 mΩ 16 A.
Worldwide best RDS(on) x area.
Worldwide best FOM (figure of merit).
Ultra low gate charge.
100% avalanche tested.
Zener-protected.

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STD80N240K6 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STD80N240K6
Manufacturer	STMicroelectronics
File Size	534.53 KB
Description	N-channel Power MOSFET
Datasheet	STD80N240K6 Datasheet

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Full PDF Text Transcription (Reference)

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STD80N240K6 Datasheet N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID STD80N240K6 800 V 220 mΩ 16 A • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications AM01476v1_tab • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.