STD80N240K6 Datasheet | STMicroelectronics

Features Order code RDS(on) max. 800 V 220 mΩ 16 A - Worldwide best RDS(on) x area - Worldwide best FOM (figure of merit) - Ultra low gate charge - 100% avalanche tested - Zener-protected Applications AM01476v1_tab - Flyback converter - Adapters for tablets, notebook and AIO - LED lighting Description This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. Product status link STD80N240K6 Product summary Order code Marking 80N240K6 Package DPAK Packing Tape and reel DS13793 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source...