STD95P3LLH6AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS STD95P3LLH6AG -30 V RDS(on) max. 6.9 mΩ ID -80 A PTOT 104 W Figure 1: Internal schematic diagram D(2, TAB)
* Designed for automotive applicatio.

Application

and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM11258v1 Table 1: Device summary Marking Package Packing.

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