STD95P3LLH6AG Description
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Device summary Marking Package Packing 95P3LLH6 DPAK Tape and reel July 2016 DocID029600 Rev 1 This is information on a product in full production.
STD95P3LLH6AG Key Features
- Designed for automotive