STD9N10-1 Datasheet | STMicroelectronics

.. N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A STD9N10 STD9N10-1 Figure 1. Package Features SUMMARY - TYPICAL RDS(on) = 0.23 Ω - - - - - - - AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") IPAK TO-251 3 2 1 3 1 DPAK TO-252 - Figure 2. Internal Schematic Diagram -...