STD9N10 Datasheet | STMicroelectronics

.. - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST D9N10 s s s s s s s s V DSS 100 V R DS(on) < 0.27 Ω ID 9 A s s TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 2 1 1 3 IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC...