| Part number | STD9N10L |
|---|---|
| Datasheet | STD9N10L_STMicroelectronics.pdf |
| File Size | 77.38 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL POWER MOS TRANSISTOR |
|
|
Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 15 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 250 µ A T c = 100 o C 9 Min. 7 520 90 30 700 120 40 Max. Unit S pF pF pF 2/6 ® STD9N10L (continued) SWITCHING ON Symbol...
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STD9N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD9N10-1 | N-CHANNEL POWER MOS TRANSISTOR |
| STD90N02L | N-CHANNEL MOSFET |
| STD90N02L-1 | N-CHANNEL MOSFET |
| STD90N03L | N-Channel Power MOSFET |
| STD90N03L-1 | N-Channel Power MOSFET |
| STD90NH02L | N-CHANNEL POWER MOSFET |
| STD93003 | HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
| STD95N04 | N-channel Power MOSFET |
| STD95N4F3 | N-channel Power MOSFET |
