STD9N10-1 Description
N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table.
STD9N10-1 Key Features
- TYPICAL RDS(on) = 0.23 Ω
- AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABI
- Figure 2. Internal Schematic Diagram