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STD9N10-1 - N-CHANNEL POWER MOS TRANSISTOR

General Description

Information furnished is believed to be accurate and reliable.

Key Features

  • Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A STD9N10 STD9N10-1 Figure 1. Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A STD9N10 STD9N10-1 Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ ■ ■ ■ ■ ■ ■ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") IPAK TO-251 3 2 1 3 1 DPAK TO-252 ■ Figure 2.