STF10N60DM2 Datasheet | STMicroelectronics

Features Order code STF10N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.530 Ω ID PTOT 8 A 25 W - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STF10N60DM2 Table 1: Device summary Marking 10N60DM2 Package TO-220FP Packing Tube June 2016 Doc ID029381 Rev 1 This is information on a product in full...