Full PDF Text Transcription for STF22NM60ND (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STF22NM60ND. For precise diagrams, and layout, please refer to the original PDF.
STF22NM60ND Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in a TO-220FP package Datasheet - production data Features 3 2 1 TO-220FP Figure 1...
View more extracted text
P package Datasheet - production data Features 3 2 1 TO-220FP Figure 1. Internal schematic diagram ' * 6 $0Y Order code STF22NM60ND VDS @ TJmax 650 V RDS(on) max 0.22 Ω ID 17 A • Designed for automotive applications and AEC-Q101 qualified • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications Description This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and supe
STF22NM60ND Datasheet
