STF260N4F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STF260N4F7 Table 1: Device summary Marking Package 260N4F7 TO-220FP Packaging Tube October 2015 DocID028478 Rev 1 This is preliminary information on a new product...
STF260N4F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness