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STF7NM60N Datasheet

N-channel Power MOSFET

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STD7NM60N, STF7NM60N, STU7NM60N
Datasheet
N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in
DPAK, TO-220FP and IPAK packages
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
RDS(on) max.
STD7NM60N
STF7NM60N
600 V
0.9 Ω
STU7NM60N
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
ID
5A
Package
DPAK
TO-220FP
IPAK
Applications
• Switching applications
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh™ technology. These revolutionary Power MOSFETs
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters.
Product status link
STD7NM60N
STF7NM60N
STU7NM60N
DS6523 - Rev 5 - September 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STF7NM60N Datasheet

N-channel Power MOSFET

No Preview Available !

STD7NM60N, STF7NM60N, STU7NM60N
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
DPAK, IPAK
TO-220FP
VDS Drain-source voltage
600
VGS Gate-source voltage
±25
ID Drain current (continuous) at TC = 25 °C
5 5 (1)
ID Drain current (continuous) at TC = 100 °C
3
3 (1)
IDM (2)
Drain current (pulsed)
20 20 (1)
PTOT
Total dissipation at TC = 25 °C
45 20
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat-sink (t = 1 s, TC = 25 °C)
2.5
dv/dt (3) Peak diode recovery voltage slope
15
Tj Operating junction temperature range
Tstg Storage temperature range
-55 to 150
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 5 A, di/dt ≤ 100 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient
Rthj-pcb(1) Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
DPAK
2.78
50
Value
TO-220FP
6.25
62.5
IPAK
2.78
100
Table 3. Avalanche characteristics
Symbol
Parameter
IAS(1)
Avalanche current, repetitive or not-repetitive
EAS(2)
Single pulse avalanche energy
1. Pulse width limited by Tj max.
2. Starting Tj = 25 °C, ID = IAS, VDD = 50 V.
Value
2
119
Unit
V
V
A
A
A
W
kV
V/ns
°C
Unit
°C/W
°C/W
°C/W
Unit
A
mJ
DS6523 - Rev 5
page 2/26


Part Number STF7NM60N
Description N-channel Power MOSFET
Maker STMicroelectronics
Total Page 26 Pages
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