STF9HN65M2 Datasheet, STMicroelectronics

Order code STF9HN65M2 VDS 600 V RDS(on) max. 0.82 Ω ID 5.5 A
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* 100% avalanche te.

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology..

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for th.