STFI13NM60N mosfet equivalent, n-channel power mosfet.
Type
VDSS
RDS(on)
(@Tjmax) max
ID
PTOT
STFI13NM60N 650 V < 0.36 Ω 11 A 25 W
* Fully insulated and low profile package with increased creepage path from pin to.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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