STFI13N60M2 Datasheet - STMicroelectronics

STFI13N60M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefo.

STFI13N60M2 Features

* 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

STFI13N60M2 Datasheet (590.30 KB)