STFI13N80K5 Datasheet | STMicroelectronics

N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package - production data Features 1 23 I2PAKFP Figure 1. Internal schematic diagram D(2) Order code VDS STFI13N80K5 800 V RDS(on) 0.45 Ω ID 12 A PTOT 35 W - Fully insulated and low profile package with increased creepage path from pin to heatsink plate - Industry’s lowest RDS(on) x area - Industry’s best figure of merit (Fo M) - Ultra low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications G(1) S(3) AM01476v1 Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STFI13N80K5 Table 1. Device summary Marking Package 13N80K5 I²PAKFP (TO-281) Packaging Tube December...