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STFI13N80K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • 1 23 I2PAKFP Figure 1. Internal schematic diagram D(2) Order code VDS STFI13N80K5 800 V RDS(on) 0.45 Ω ID 12 A PTOT 35 W.
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription for STFI13N80K5 (Reference)

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STFI13N80K5 N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package Datasheet - production data Features 1 23 I2PAKFP Figure 1. Internal schematic...

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t - production data Features 1 23 I2PAKFP Figure 1. Internal schematic diagram D(2) Order code VDS STFI13N80K5 800 V RDS(on) 0.45 Ω ID 12 A PTOT 35 W • Fully insulated and low profile package with increased creepage path from pin to heatsink plate • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

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