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STFI13NM60N - N-Channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Type VDSS RDS(on) (@Tjmax) max ID PTOT STFI13NM60N 650 V < 0.36 Ω 11 A 25 W.
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet preview – STFI13NM60N

Datasheet Details

Part number STFI13NM60N
Manufacturer STMicroelectronics
File Size 776.68 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STFI13NM60N Datasheet
Additional preview pages of the STFI13NM60N datasheet.

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Full PDF Text Transcription

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STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS RDS(on) (@Tjmax) max ID PTOT STFI13NM60N 650 V < 0.36 Ω 11 A 25 W ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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