STFI13NM60N Datasheet | STMicroelectronics

N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in I²PAKFP package - production data Features Type VDSS RDS(on) (@Tjmax) max PTOT STFI13NM60N 650 V < 0.36 Ω 11 A 25 W - Fully insulated and low profile package with increased creepage path from pin to heatsink plate - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 1 2 3 I²PAKFP (TO-281) Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order codes Marking 13NM60N 3 3# Packages I2PAKFP (TO-281) Packaging Tube May...