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STFI13N60M2 - N-CHANNEL POWER MOSFET

Download the STFI13N60M2 datasheet PDF. This datasheet also covers the STF13N60M2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF13N60M2_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STFI13N60M2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STFI13N60M2. For precise diagrams, and layout, please refer to the original PDF.

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet − production data Features 3 ...

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TO-220FP and I PAKFP packages Datasheet − production data Features 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.