STFI13N60M2 Datasheet | STMicroelectronics

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I PAKFP packages - production data Features 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A - Extremely low gate charge - Lower RDS(on) x area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STF13N60M2 STFI13N60M2 Table 1. Device summary Marking Packag...