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STFI130N10F3 - N-channel Power MOSFET

Download the STFI130N10F3 datasheet PDF. This datasheet also covers the STF130N10F3 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.

Key Features

  • Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3.
  • VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-220.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF130N10F3_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STFI130N10F3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STFI130N10F3. For precise diagrams, and layout, please refer to the original PDF.

STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 N-channel 100 V, 7.8 mΩ typ., 120 A STripFET™III Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and TO-220 packages Data...

View more extracted text
II Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and TO-220 packages Datasheet — production data Features Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3 ■ ■ VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-220 Applications ■ High current switching applications Figure 1.

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