STFI15N60M2-EP Datasheet, STMicroelectronics

Order code VDS@TJmax RDS(on)max. ID STFI15N60M2-EP 650 V 0.378 Ω 11 A
* Fully insulated and low profile package with increased creepage path from pin to heat.

G(1)
* Switching applications
* Tailored for very high frequency converters (f > 150 kHz) S(3) AM01476v1 Prod.

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with v.