STFI10LN80K5 Datasheet | STMicroelectronics

N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a I²PAKFP package - production data Features Order code STFI10LN80K5 VDS 800 V RDS(on) max. 0.63 Ω ID 8A 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1) - Fully insulated and low profile package with increased creepage path from pin to heatsink plate - Industry’s RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STFI10LN80K5 AM15572v1_no_tab Table 1: Device summary Marking 10LN80K5 Package I²PAKFP Packing Tube February...