Datasheet4U Logo Datasheet4U.com

STFI10LN80K5 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STFI10LN80K5 VDS 800 V RDS(on) max. 0.63 Ω ID 8A 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1).
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
  • Industry’s RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – STFI10LN80K5

Datasheet Details

Part number STFI10LN80K5
Manufacturer STMicroelectronics
File Size 466.48 KB
Description N-channel Power MOSFET
Datasheet download datasheet STFI10LN80K5 Datasheet
Additional preview pages of the STFI10LN80K5 datasheet.

📁 Similar Datasheet

  • STF - Three PhaseNeutral Filters (PREMO CORPORATION)
  • STF-xxxHV - Three-Phase + Neutral Line Filters (Premo)
  • STF0402 - COMMON MODE CHOKE (Superworld Electronics)
  • STF0402100YZF - COMMON MODE CHOKE (Superworld Electronics)
  • STF0402151YZF - COMMON MODE CHOKE (Superworld Electronics)
  • STF0402221YZF - COMMON MODE CHOKE (Superworld Electronics)
  • STF0402400YZF - COMMON MODE CHOKE (Superworld Electronics)
  • STF0402850YZF - COMMON MODE CHOKE (Superworld Electronics)
  • STF06N20 - N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STF0703 - COMMON MODE CHOKE (Superworld Electronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STFI10LN80K5 N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code STFI10LN80K5 VDS 800 V RDS(on) max. 0.63 Ω ID 8A 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1)  Fully insulated and low profile package with increased creepage path from pin to heatsink plate  Industry’s RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
Published: |