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STFI10LN80K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STFI10LN80K5 VDS 800 V RDS(on) max. 0.63 Ω ID 8A 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1).
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
  • Industry’s RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription for STFI10LN80K5 (Reference)

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STFI10LN80K5 N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code STFI10LN80K5 VDS 800 V RDS(on)...

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t - production data Features Order code STFI10LN80K5 VDS 800 V RDS(on) max. 0.63 Ω ID 8A 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1)  Fully insulated and low profile package with increased creepage path from pin to heatsink plate  Industry’s RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

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