STFI10NK60Z Datasheet | STMicroelectronics

N-channel 600 V, 0.65 Ω, 10 A, Zener-protected Super MESH™ Power MOSFET in I²PAKFP package - production data Features Type STFI10NK60Z VDSS 600 V RDS(on) max < 0.75 Ω 10 A PTOT 35 W - Fully insulated and low profile package with increased creepage path from pin to heatsink plate - Extremely high dv/dt capability - 100% avalanche tested - Gate charge minimized 1 2 3 I²PAKFP (TO-281) Applications - Switching applications Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' Super MESH™ technology, achieved through optimization of ST's wellestablished strip-based Power MESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order code Marking 10NK60Z Package I2PAKFP (TO-281) Packaging Tube March...