STFI10NK60Z Description
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's wellestablished strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Table.
STFI10NK60Z Key Features
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized