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STFI10NK60Z - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's wellestablished strip-based PowerMESH™ layout.

Key Features

  • Type STFI10NK60Z VDSS 600 V RDS(on) max ID < 0.75 Ω 10 A PTOT 35 W.
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized 1 2 3 I²PAKFP (TO-281).

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Full PDF Text Transcription for STFI10NK60Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STFI10NK60Z. For precise diagrams, and layout, please refer to the original PDF.

STFI10NK60Z N-channel 600 V, 0.65 Ω, 10 A, Zener-protected SuperMESH™ Power MOSFET in I²PAKFP package Datasheet — production data Features Type STFI10NK60Z VDSS 600 V RDS...

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e Datasheet — production data Features Type STFI10NK60Z VDSS 600 V RDS(on) max ID < 0.75 Ω 10 A PTOT 35 W ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized 1 2 3 I²PAKFP (TO-281) Applications ■ Switching applications Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's wellestablished strip-based PowerMESH™ layout.

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