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STFI11N65M2 - N-channel Power MOSFETs

Download the STFI11N65M2 datasheet PDF. This datasheet also covers the STF11N65M2 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • 3 2 1 TO-220FP 1 23 I2PAKFP Figure 1. Internal schematic diagram '  .
  •  6  AM01476v1 Order codes STF11N65M2 STFI11N65M2 VDS 650 V RDS(on) max ID 0.67 Ω 7A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF11N65M2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STFI11N65M2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STFI11N65M2. For precise diagrams, and layout, please refer to the original PDF.

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - preliminary data Features 3 2...

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O-220FP and I PAKFP packages Datasheet - preliminary data Features 3 2 1 TO-220FP 1 23 I2PAKFP Figure 1. Internal schematic diagram '  *  6  AM01476v1 Order codes STF11N65M2 STFI11N65M2 VDS 650 V RDS(on) max ID 0.67 Ω 7A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

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