Download the STFI11NM65N datasheet PDF.
This datasheet also covers the STF11NM65N variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology.
These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
123
TO-220FP
TO-2201 23
Order codes STF11NM65N
VDS
RDS(on) max. ID
t(s) 123
I2PAKFP
uc (TO-281)
STFI11NM65N
650 V
455 mΩ
11 A
STP11NM65N.
Note: The manufacturer provides a single datasheet file (STF11NM65N-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for STFI11NM65N (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STFI11NM65N. For precise diagrams, and layout, please refer to the original PDF.
STF11NM65N, STFI11NM65N, STP11NM65N Datasheet N-channel 650 V, 425 mΩ typ., 11 A MDmesh II Power MOSFETs in TO-220FP, I²PAKFP and TO-220 packages TAB Features 123 TO-220F...
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FETs in TO-220FP, I²PAKFP and TO-220 packages TAB Features 123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N • 100% avalanche tested d D(2, TAB) • Low input capacitance and gate charge ro • Low gate input resistance te P Applications ole G(1) • Switching applications bs Description O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s low
STFI11NM65N Datasheet
