STFI11N60M2-EP Datasheet | STMicroelectronics

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in an I²PAKFP package Features 1 23 I 2 PAKFP (TO-281) D(2) Order code RDS(on) max. 600 V 0.595 Ω - Extremely low gate charge - Excellent output capacitance (COSS) profile - Very low turn-off switching losses - 100% avalanche tested - Zener-protected ID 7.5 A Applications - Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STFI11N60M2-EP Product summary Order code Marking 11N60M2EP Package I²PAKFP (TO-281) Packing Tube DS11601 - Rev...