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STFI11N60M2-EP - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Key Features

  • 1 23 I 2 PAKFP (TO-281) D(2) Order code VDS RDS(on) max. STFI11N60M2-EP 600 V 0.595 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected ID 7.5 A.

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Full PDF Text Transcription for STFI11N60M2-EP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STFI11N60M2-EP. For precise diagrams, and layout, please refer to the original PDF.

STFI11N60M2-EP Datasheet N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in an I²PAKFP package Features 1 23 I 2 PAKFP (TO-281) D(2) Order code VDS RDS(on...

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FP package Features 1 23 I 2 PAKFP (TO-281) D(2) Order code VDS RDS(on) max. STFI11N60M2-EP 600 V 0.595 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected ID 7.5 A Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

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