STFI10N62K3 Datasheet | STMicroelectronics

STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A Super MESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages - production data Features Type VDSS RDS(on) max Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package - 100% avalanche tested - Extremely high dv/dt capability - Gate charge minimized - Very low intrinsic capacitances - Improved diode reverse recovery characteristics - Zener-protected Applications - Switching applications Description These Super MESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ Super MESH™ technology, bined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 10N62K3 10N62K3 10N62K3 10N62K3 2...