Download the STFI10N62K3 datasheet PDF.
This datasheet also covers the STF10N62K3 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
Key Features
Type
VDSS
RDS(on) max
ID
Pw
STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3
620 V
< 0.75 Ω
8.4 A(1) 8.4 A
30 W 125 W
1. Limited by package.
Note: The manufacturer provides a single datasheet file (STF10N62K3-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for STFI10N62K3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STFI10N62K3. For precise diagrams, and layout, please refer to the original PDF.
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − prod...
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r MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
STFI10N62K3 Datasheet
