STFI24N60M2 Key Features
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Part: STFI24N60M2
- Manufacturer: STMicroelectronics (official site)
- Size: 508.63 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STFI24NM60N | N-channel Power MOSFET |
| STFI20N65M5 | N-channel Power MOSFET |
| STFI20NK50Z | N-channel Power MOSFET |
| STFI20NM65N | N-channel Power MOSFET |
| STFI260N6F6 | N-CHANNEL POWER MOSFET |
STFI24N60M2 Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: These revolutionary Power MOSFETs associate a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.