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STFI24NM60N - N-channel Power MOSFET

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General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Overview

STFI24NM60N N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET in a I²PAKFP package Datasheet − production.

Key Features

  • 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram Order codes VDS @Tjmax RDS(on) max. ID STFI24NM60N 650 V 0.19 Ω 17 A.
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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