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STFI24N60M2 - N-channel Power MOSFET

Download the STFI24N60M2 datasheet PDF. This datasheet also covers the STF24N60M2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (STF24N60M2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Overview

STF24N60M2, STFI24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production.

Key Features

  • 3 2 1 TO-220FP 123 I2PAKFP (TO-281) Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes STF24N60M2 STFI24N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.19 Ω 18 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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