STFI24NM60N Key Features
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Part: STFI24NM60N
- Manufacturer: STMicroelectronics (official site)
- Size: 389.23 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STFI24N60M2 | N-channel Power MOSFET |
| STFI20N65M5 | N-channel Power MOSFET |
| STFI20NK50Z | N-channel Power MOSFET |
| STFI20NM65N | N-channel Power MOSFET |
| STFI260N6F6 | N-CHANNEL POWER MOSFET |
STFI24NM60N Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.