STGB20NB32LZ-1 Description
lete uc Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has so ro designed an advanced family of IGBTs, the b P PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener - O te exhibits a very precise active clamping while the ) le gate-emitter zener supplies an ESD protection. Operating Junction Temperature d ( )Pulse width limited by safe...