Datasheet Summary
Automotive-grade 390 V internally clamped IGBT
ESCIS 180 mJ
- production data
3 1
DPAK
Features
- AEC-Q101 qualified
- 180 mJ of avalanche energy @ TC = 150 °C,
L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
- Pencil coil electronic ignition driver
G (1)
RG RGE
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection...