STMicroelectronics STGD19N40LZ
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.FEATURES
● AEC-Q101 qualified● 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
● ESD gate-emitter protection
● Gate-collector high voltage clamping
● Logic level gate drive
● Low saturation voltage
● High pulsed current capability
● Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB)
APPLICATIONS
● Pencil coil electronic ignition driver G (1) RG RGEDESCRIPTION
The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. E (3) SC30180 Order code STGD19N40LZ Table 1. Device summary Marking Packages GD19N40LZ DPAK Packing Tape and reel October 2016 This is information on a product in full production. DocID024506 Rev 6 1/17 Contents Contents STGD19N40LZ 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................