STGD19N40LZ Datasheet Automotive-grade 390v Internally Clamped IGBT

Manufacturer: STMicroelectronics

Overview: STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data TAB 3.

Datasheet Details

Part number	STGD19N40LZ
Manufacturer	STMicroelectronics
File Size	1.04 MB
Description	Automotive-grade 390V internally clamped IGBT
Datasheet	STGD19N40LZ-STMicroelectronics.pdf

This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.

AEC-Q101 qualified.
180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH.
ESD gate-emitter protection.
Gate-collector high voltage clamping.
Logic level gate drive.
Low saturation voltage.
High pulsed current capability.
Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB).

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