STGFW30H65FB Datasheet - STMicroelectronics

IGBT

STGFW30H65FB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.55 V (typ.) at IC = 30 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance Applications

* Photov

STGFW30H65FB General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the .

STGFW30H65FB Datasheet (432.91 KB)

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Datasheet Details

Part number:

STGFW30H65FB

Manufacturer:

STMicroelectronics ↗

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432.91 KB

Description:

Igbt.
STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3.

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STGFW30H65FB IGBT STMicroelectronics

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STGFW30H65FB Features

STGFW30H65FB General Description

Datasheet Details

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