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STGFW30V60DF Datasheet IGBT

Manufacturer: STMicroelectronics

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGFW30V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 30 A very high speed TO-3PF 3 2 1 C (2) G (1) Sc12850_no_tab E.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 30 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.