STMicroelectronics STGFW30V60DF
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.| Part No. | STGFW30V60DF |
|---|---|
| Datasheet | STGFW30V60DF Download |
| Manufacturer |  STMicroelectronics |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Tail-less switching off
● VCE(sat) = 1.85 V (typ.) @ IC = 30 A
● Tight parameter distribution
● Safe paralleling
● Low thermal resistance
● Very fast soft recovery antiparallel diode
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● Very high frequency converters
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGFW30V60DF Product summary Order code STGFW30V60DF Marking G30V60DF Package TO-3PF Packing Tube DS10275 - Rev 2 - April 2020 For further information contact your local STMicroelectronics sales office. STGFW30V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed co...
