STGFW30V60DF
STGFW30V60DF is IGBT manufactured by STMicroelectronics.
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
TO-3PF
3 2 1
C (2)
G (1)
Sc12850_no_tab
E (3)
Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status link STGFW30V60DF
Product summary
Order code
Marking
G30V60DF
Package
TO-3PF...
