STGFW30H65FB
STGFW30H65FB is IGBT manufactured by STMicroelectronics.
STGFW30H65FB, STGW30H65FB
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
3 2 1
TO-247
TO-3PF
3 2 1
G(1)
C(2, TAB)
E(3)
G1C2TE3
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.55 V (typ.) at IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
Applications
- Photovoltaic inverters
- Power factor correction
- Welding
- High-frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status links STGFW30H65FB STGW30H65FB
DS10155
- Rev 7
- March 2021 For further information contact your local STMicroelectronics sales...
