STMicroelectronics STGFW20V60DF
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.| Part No. | STGFW20V60DF |
|---|---|
| Datasheet | STGFW20V60DF Download |
| Manufacturer |  STMicroelectronics |
| Description | Trench gate field-stop IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Very high speed switching series
● Tail-less switching off
● VCE(sat) = 1.8 V (typ.) @ IC = 20 A
● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● Very fast soft recovery antiparallel diode
● Lead free package
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● Very high frequency converters G (1) Sc12850_no_tab E (3) Order code STGFW20V60DF
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Marking Package Packing G20V60DF TO-3PF Tube February 2017 DocID026148 Rev 2 This is information on a product in full production. 1/15 Contents Contents STGFW20V60DF 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................
