STGIPQ4C60T-HL Key Features
- IPM 6 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes
- 3.3 V, 5 V, 15 V TTL/CMOS input parators with hysteresis and pull-down/ pull-up resistors
- Internal bootstrap diode
- Optimized for low electromagnetic interference
- Undervoltage lockout
- Short-circuit rugged TFS IGBT
- Shutdown function
- Interlocking function
- Op-amp for advanced current sensing
- parator for fault protection against overcurrent