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STGP20M65DF2 - low-loss IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

  • High short-circuit withstand time.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode G(1) C(2, TAB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGP20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT TAB TO-220 1 23 Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode G(1) C(2, TAB) Applications • Motor control • UPS • PFC • General-purpose inverters Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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