STGP20M65DF2 Datasheet - STMicroelectronics

low-loss IGBT

STGP20M65DF2 Features

* High short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safer paralleling

* Low thermal resistance

* Soft and very fast recovery antiparallel diode G(1) C(2, TAB) Applications

* Motor cont

STGP20M65DF2 General Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is esse.

STGP20M65DF2 Datasheet (515.89 KB)