Datasheet Summary
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STGF100N30 STGP100N30, STGW100N30
90 A
- 330 V
- fast IGBT
Features
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- -
- Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency High repetitive peak current capability
3 1 2
3 1 2
2 1
TO-220FP
TO-247
Description
Advanced high-density and high-current IGBT technology with low-drop panion diode adapted to various functions in PDP sets.
TO-220
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking GF100N30 GP100N30 GW100N30 Package...