STMicroelectronics STGP10M65DF2
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential.| Part No. | STGP10M65DF2 |
|---|---|
| Datasheet | STGP10M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 10A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● 6 µs of short-circuit withstand time● VCE(sat) = 1.55 V (typ.) @ IC = 10 A
● Tight parameter distribution
● Safer paralleling
● Low thermal resistance
● Soft and very fast recovery antiparallel diode
APPLICATIONS
● Motor control● UPS
● PFC
DESCRIPTION
Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGP10M65DF2 Table 1: Device summary Marking G10M65DF2 Package TO-220 Packing Tube October 2015 DocID027352 Rev 4 This is information on a product in full production. 1/18 Contents Contents STGP10M65DF2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 7 3 Test circuits ................................................................................... 13 4 Package information .....................................................................
